Effects of High-Pressure High-Temperature Sintering on the Band Gap and Thermoelectric Properties of PbSe

被引：4
作者：
Chen, Bo [1 ,2 ]
Li, Yi [1 ,2 ]
Sun, Zhen-Ya [3 ]
机构：
[1] Xuzhou Construct Machinery Grp, Jiangsu Xuzhou Construct Machinery Res Inst, Xuzhou 221004, Peoples R China
[2] Xuzhou Construct Machinery Grp, State Key Lab Intelligent Mfg Adv Construct Machi, Xuzhou 221004, Peoples R China
[3] Wuhan Univ Technol, Ctr Mat Res & Anal, 122 Luoshi Rd, Wuhan 430000, Hubei, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 06期
基金：
国家重点研发计划;
关键词：
High-pressure high-temperature sintering; thermoelectric; band gap; PbSe; LEAD CHALCOGENIDES; PBTE; PERFORMANCE;
D O I：
10.1007/s11664-017-5958-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, PbSe bulk samples were prepared by a high-pressure high-temperature (HPHT) sintering technique, and the phase compositions, band gaps and thermoelectric properties of the samples were systematically investigated. The sintering pressure exerts a significant influence on the preferential orientation, band gap and thermoelectric properties of PbSe. With increasing pressure, the preferential orientation decreases, mainly due to the decreased crystallinity, while the band gap first decreases and then increases. The electrical conductivity and power factor decrease gradually with increasing pressure, mainly attributed to the decreased carrier concentration and mobility. Consequently, the sample prepared by 2 GPa shows the highest thermoelectric figure-of-merit, ZT, of 0.55 at similar to 475 K. The ZT of the HPHT-sintered PbSe could be further improved by properly doping or optimizing the HPHT parameters. This study further demonstrates that the sintering pressure could be another degree of freedom to manipulate the band structure and thermoelectric properties of materials.
引用
收藏
页码：3099 / 3104
页数：6
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