ELECTRONIC AND ELASTIC PROPERTIES OF ZINC-BLENDE MgSe

In the present study, ground state and elastic properties of semiconductor MgSe in zinc-blende phase are investigated using density functional theory (DFT). Exchange-correlation potentials are approximated with the generalized gradient approximation (GGA). From the calculated bulk modulus, we determine the refractive index, plasmon energy, cohesive energy and micro-hardness of the MgSe semiconductor binary alloy. The density of state (DOS), projected density of state (PDOS), phonon dispersion frequencies, charged density, electronic band structure and dielectric functions are also reported. From the band structure, a direct band gap of 2.50 eV was observed in close agreement with other reported calculations, but lower than the experimental value of 3.60 eV. Along the high symmetries directions, we found a striking resemblance between MgSe and a III-V semiconductor, while the high cohesive energy in MgSe suggests filled bonding orbitals which might result in decrease in atomic volume with corresponding increased compression of the s-orbitals under any transition series.