Strain engineering 4H-SiC with ion beams

被引：12

作者：

Zhang, F. X. ^{[1
]}

Tong, Y. ^{[1
]}

Xue, Haizhou ^{[2
]}

Keum, J. K. ^{[3
]}

Zhang, Yanwen ^{[1
]}

Boulle, A. ^{[4
]}

Debelle, A. ^{[5
]}

Weber, W. J. ^{[1
,2
]}

机构：

[1] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[2] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[4] Ctr Europeen Ceram, CNRS UMR 7315, Inst Rech Ceramiqes, 12 Rue Atlantis, F-87068 Limoges, France

[5] Univ Paris Sud, CNRS IN2P3, Ctr Sci Nucl & Sci Mat, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 22期

关键词：

SILICON-CARBIDE; AMORPHIZATION;

D O I：

10.1063/1.5109226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystals of 4H-SiC irradiated with 900keV Si and 21MeV Ni ions separately and sequentially were studied by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC irradiated with 900keV Si ions to a fluence of 6.3x10(14) ions/cm(2) experiences 7.3% strain over the depth of 650nm. Strain relaxation from ionization-induced annealing was directly observed due to subsequent irradiation with 21MeV Ni ions to a fluence of 2x10(14) ions/cm(2). These competitive processes suggest the use of ion irradiation to create a specific strain state in 4H-SiC, particularly in films.

引用

页数：4

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