Strain engineering 4H-SiC with ion beams

被引：12

作者：

Zhang, F. X. ^{[1
]}

Tong, Y. ^{[1
]}

Xue, Haizhou ^{[2
]}

Keum, J. K. ^{[3
]}

Zhang, Yanwen ^{[1
]}

Boulle, A. ^{[4
]}

Debelle, A. ^{[5
]}

Weber, W. J. ^{[1
,2
]}

机构：

[1] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[2] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[4] Ctr Europeen Ceram, CNRS UMR 7315, Inst Rech Ceramiqes, 12 Rue Atlantis, F-87068 Limoges, France

[5] Univ Paris Sud, CNRS IN2P3, Ctr Sci Nucl & Sci Mat, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 22期

关键词：

SILICON-CARBIDE; AMORPHIZATION;

D O I：

10.1063/1.5109226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystals of 4H-SiC irradiated with 900keV Si and 21MeV Ni ions separately and sequentially were studied by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC irradiated with 900keV Si ions to a fluence of 6.3x10(14) ions/cm(2) experiences 7.3% strain over the depth of 650nm. Strain relaxation from ionization-induced annealing was directly observed due to subsequent irradiation with 21MeV Ni ions to a fluence of 2x10(14) ions/cm(2). These competitive processes suggest the use of ion irradiation to create a specific strain state in 4H-SiC, particularly in films.

引用

页数：4

共 50 条

[11] Optimization of Ion Implantation processes for 4H-SiC DIMOSFET
N. Piluso
E. Fontana
M. A. Di Stefano
G. Litrico
S. Privitera
A. Russo
S. Lorenti
S. Coffa
F. La Via
MRS Advances, 2016, 1 (55) : 3673 - 3678
[12] Impact ionization in ion implanted 4H-SiC photodiodes
Loh, Wei Sun
Goh, Eric Z. J.
Vassilevski, Konstantin
Nikitina, Irina
David, John P. R.
Wright, Nick G.
Johnson, C. Mark
SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES, 2008, 1069 : 245 - +
[13] Channeling measurements of ion implantation damage in 4H-SiC
Kuznetsov, A.Yu.
Janson, M.S.
Hallán, A.
Svensson, B.G.
Jagadish, C.
Grünleitner, H.
Pensl, G.
Materials Science Forum, 2001, 353-356 : 595 - 598
[14] Ion implantation induced defects in epitaxial 4H-SiC
Hallén, A
Henry, A
Pellegrino, E
Svensson, BG
Åberg, D
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 378 - 381
[15] Defects in High Energy Ion Irradiated 4H-SiC
Izzo, G.
Litrico, G.
Severino, A.
Foti, G.
La Via, F.
Calcagno, L.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 397 - 400
[16] Dislocation loop evolution in ion implanted 4H-SiC
Persson, P.O.A. (perpe@ifm.liu.se), 1600, American Institute of Physics Inc. (93):
[17] Dislocation loop evolution in ion implanted 4H-SiC
Persson, POÅ
Hultman, L
Janson, MS
Hallén, A
Yakimova, R
JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) : 9395 - 9397
[18] Optimization of Ion Implantation processes for 4H-SiC DIMOSFET
Piluso, N.
Fontana, E.
Di Stefano, A.
Litrico, G.
Privitera, S.
Russo, A.
Lorenti, S.
Coffa, S.
La Via, F.
MRS ADVANCES, 2016, 1 (55): : 3673 - 3678
[19] Optical characterization of ion-implanted 4H-SiC
Feng, ZC
Yan, F
Chang, WY
Zhao, JH
Lin, J
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 647 - 650
[20] Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering
Anusmita Chakravorty
Alexandre Boulle
Aurélien Debelle
Isabelle Monnet
Gouranga Manna
Pinku Saha
Mrinmay Kumar Mukhopadhyay
Debdulal Kabiraj
Journal of Materials Science, 2022, 57 : 20309 - 20319

← 1 2 3 4 5 →