Characterization of Electrical Properties of n-Type 4H-SiC Single Crystals by Raman Spectroscopy

被引：4

作者：

Hu, Xiaobo ^{[1
]}

Peng, Yan ^{[1
]}

Wei, Rusheng ^{[1
]}

Chen, Xiufang ^{[1
]}

Xu, Xiangang ^{[1
]}

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 08期

关键词：

CARRIER CONCENTRATION; GROWTH;

D O I：

10.1149/2.005308jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-type 4H-SiC single crystals have been grown by N-doped sublimation method. The electrical properties of 4H-SiC single crystal wafers were assessed by Raman scattering and Hall measurement system. It has been found that the carrier concentrations in whole wafer are inhomogeneous. Due to facet effect, the carrier concentration in facet region is higher than that in other region. In addition, the carrier concentration in early growth stage is higher than that in later growth stage because of desorption of nitrogen existing in crucible and raw material at high temperature. Furthermore, some approaches to the growth of n-type 4H-SiC single crystals with homogeneous carrier concentration were proposed. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：N3022 / N3024

页数：3

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