Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer

被引：28

作者：

Kurosawa, Masashi ^{[1
,2
]}

Taoka, Noriyuki ^{[1
]}

Sakashita, Mitsuo ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Miyao, Masanobu ^{[3
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] JSPS, Chiyoda Ku, Tokyo 1020083, Japan

[3] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 10期

关键词：

CRYSTALLIZATION; GAP;

D O I：

10.1063/1.4820405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of surface oxide layers on liquid-Sn-driven GeSn crystallization on insulators at various temperatures (<475 degrees C) are investigated. An amorphous Ge in neighborhood of patterned-Sn (<3.5 mu m) becomes to polycrystalline Ge1-xSnx (x approximate to 0.025 - 0.14) after annealing at 150-475 degrees C, which is independent of the surface oxide thickness. Interestingly, a 50-mu m-length lateral growth of polycrystalline Ge0.99Sn0.01 layers achieved by combination of thickening of the surface-oxide treated by NH4OH and annealing above melting temperature of Sn (231.9 degrees C). The growth length is 15 times longer than without the treatment. The advanced process promises to achieve group-IV-based optic and electronic devices on flexible substrates and Si platforms. (C) 2013 AIP Publishing LLC.

引用

页数：4

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