Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses

被引：4

作者：

Ryu, Han-Youl ^{[1
]}

Jeon, Ki-Seong ^{[2
]}

Sung, Jun-Ho ^{[2
]}

Lee, Min-Woo ^{[2
]}

Lee, Euna ^{[2
]}

Song, Hooyoung ^{[2
]}

Kang, Min-Gu ^{[2
]}

Choi, Yoonho ^{[2
]}

Lee, Jeong-Soo ^{[2
]}

机构：

[1] Inha Univ, Dept Phys, Inchon 402751, South Korea

[2] LG Elect Adv Res Inst, Seoul 137724, South Korea

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Light-emitting diode; GaN on Si; Internal quantum efficiency; Rate equation; DROOP;

D O I：

10.1016/j.cap.2013.06.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a convenient and reliable method for determining the internal quantum efficiency (IQE) in GaN-based blue light-emitting diodes (LEDs) grown on Si(111) substrates based on the carrier rate equation model. By using the peak point of the efficiency curve in photoluminescence (PL) measurements as the parameter of the rate equation analysis, the IQE can be unambiguously determined without any pre-assumed parameters. The theoretical IQE model is used to fit the measured PL efficiency curves and the IQE of LED samples are determined. The maximum IQE of the LED sample grown on the Si substrate was obtained to be 0.74, which is found to agree well with the results obtained by conventional temperature-dependent PL measurements. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1600 / 1603

页数：4

共 50 条

[41] Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes
Jaecheon Han
Gucheol Kang
Daesung Kang
Yongtae Moon
Hwanhee Jeong
June-O Song
Tae-Yeon Seong
Journal of Electronic Materials, 2013, 42 : 2876 - 2880
[42] Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes
Zhou, Q.
Xu, M.
Wang, H.
OPTO-ELECTRONICS REVIEW, 2016, 24 (01) : 1 - 9
[43] Direct Determination of the Internal Quantum Efficiency of Light-Emitting Diodes
Pristovsek, Markus
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2023, 17 (01):
[44] Enhancement of Light Extraction Efficiency of GaN-Based Light-Emitting Diodes by ZnO Nanorods with Different Sizes
Oh, Semi
Shin, Kyung-Sik
Kim, Sang-Woo
Lee, Sangbin
Yu, Hyeongwoo
Cho, Soohaeng
Kim, Kyoung-Kook
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (05) : 3696 - 3699
[45] Tandem Structure for Efficiency Improvement in GaN Based Light-Emitting Diodes
Tsai, Miao-Chan
Leung, Benjamin
Hsu, Ta-Cheng
Kuo, Yen-Kuang
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2014, 32 (09) : 1801 - 1806
[46] Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure
Li, Zengcheng
Feng, Bo
Deng, Biao
Liu, Legong
Huang, Yingnan
Feng, Meixin
Zhou, Yu
Zhao, Hanmin
Sun, Qian
Wang, Huaibing
Yang, Xiaoli
Yang, Hui
JOURNAL OF SEMICONDUCTORS, 2018, 39 (04)
[47] Temperature-Dependent Efficiency Droop in GaN-Based Blue Micro Light-Emitting Diodes
Islam, Abu Bashar Mohammad Hamidul
Kim, Tae Kyoung
Cha, Yu-Jung
Shin, Dong-Soo
Shim, Jong-In
Kwak, Joon Seop
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (12)
[48] Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching
Gao, Haiyong
Yan, Fawang
Zhang, Yang
Li, Jinmin
Zeng, Yiping
Wang, Guohong
Yang, Fuhua
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, 2008, 6841
[49] Introduction to the Special Issue on “Simulation of GaN-based Light-Emitting Diodes”
Joachim Piprek
Journal of Computational Electronics, 2015, 14 : 381 - 381
[50] Design and fabrication of highly efficient GaN-based light-emitting diodes
Kim, H
Park, SJ
Hwang, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (10) : 1715 - 1722

← 1 2 3 4 5 →