Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses

被引：4

作者：

Ryu, Han-Youl ^{[1
]}

Jeon, Ki-Seong ^{[2
]}

Sung, Jun-Ho ^{[2
]}

Lee, Min-Woo ^{[2
]}

Lee, Euna ^{[2
]}

Song, Hooyoung ^{[2
]}

Kang, Min-Gu ^{[2
]}

Choi, Yoonho ^{[2
]}

Lee, Jeong-Soo ^{[2
]}

机构：

[1] Inha Univ, Dept Phys, Inchon 402751, South Korea

[2] LG Elect Adv Res Inst, Seoul 137724, South Korea

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Light-emitting diode; GaN on Si; Internal quantum efficiency; Rate equation; DROOP;

D O I：

10.1016/j.cap.2013.06.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a convenient and reliable method for determining the internal quantum efficiency (IQE) in GaN-based blue light-emitting diodes (LEDs) grown on Si(111) substrates based on the carrier rate equation model. By using the peak point of the efficiency curve in photoluminescence (PL) measurements as the parameter of the rate equation analysis, the IQE can be unambiguously determined without any pre-assumed parameters. The theoretical IQE model is used to fit the measured PL efficiency curves and the IQE of LED samples are determined. The maximum IQE of the LED sample grown on the Si substrate was obtained to be 0.74, which is found to agree well with the results obtained by conventional temperature-dependent PL measurements. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1600 / 1603

页数：4

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