Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses

被引：4

作者：

Ryu, Han-Youl ^{[1
]}

Jeon, Ki-Seong ^{[2
]}

Sung, Jun-Ho ^{[2
]}

Lee, Min-Woo ^{[2
]}

Lee, Euna ^{[2
]}

Song, Hooyoung ^{[2
]}

Kang, Min-Gu ^{[2
]}

Choi, Yoonho ^{[2
]}

Lee, Jeong-Soo ^{[2
]}

机构：

[1] Inha Univ, Dept Phys, Inchon 402751, South Korea

[2] LG Elect Adv Res Inst, Seoul 137724, South Korea

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Light-emitting diode; GaN on Si; Internal quantum efficiency; Rate equation; DROOP;

D O I：

10.1016/j.cap.2013.06.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a convenient and reliable method for determining the internal quantum efficiency (IQE) in GaN-based blue light-emitting diodes (LEDs) grown on Si(111) substrates based on the carrier rate equation model. By using the peak point of the efficiency curve in photoluminescence (PL) measurements as the parameter of the rate equation analysis, the IQE can be unambiguously determined without any pre-assumed parameters. The theoretical IQE model is used to fit the measured PL efficiency curves and the IQE of LED samples are determined. The maximum IQE of the LED sample grown on the Si substrate was obtained to be 0.74, which is found to agree well with the results obtained by conventional temperature-dependent PL measurements. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1600 / 1603

页数：4

共 50 条

[1] On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates
Zhang, Zi-Hui
Zhang, Yonghui
Bi, Wengang
Demir, Hilmi Volkan
Sun, Xiao Wei
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (12): : 3078 - 3102
[2] Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates
Ryu, Han-Youl
Ryu, Geun-Hwan
Onwukaeme, Chibuzo
APPLIED SCIENCES-BASEL, 2019, 9 (19):
[3] Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes
Usman, Muhammad
Saba, Kiran
Jahangir, Adnan
Kamran, Muhammad
Muhammad, Nazeer
ACTA MECHANICA SOLIDA SINICA, 2018, 31 (03) : 383 - 390
[4] Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates
Liu, Yi-Jung
Chen, Huey-Ing
Cheng, Shiou-Ying
Lin, Kun-Wei
Liu, Wen-Chau
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011, 8 (05): : 1664 - 1668
[5] Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
Piprek, Joachim
MATERIALS, 2020, 13 (22) : 1 - 18
[6] Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes
Usman, Muhammad
Anwar, Abdur-Rehman
Munsif, Munaza
Malik, Shahzeb
Ul Islam, Noor
SUPERLATTICES AND MICROSTRUCTURES, 2019, 135
[7] Local Doping Modulation for Improving Quantum Efficiency in GaN-Based Light-Emitting Diodes
Wang, Naiyin
Mei, Ting
Yang, Xiaodong
Li, Hao
Zhu, Ning
Zhang, Minjie
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
[8] Evaluation of the temperature-dependent internal quantum efficiency and the light-extraction efficiency in a GaN-based blue light-emitting diode by using a rate equation model
Choi, Young-Hwan
Ryu, Guen-Hwan
Ryu, Han-Youl
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (08) : 1286 - 1289
[9] Evaluation of the temperature-dependent internal quantum efficiency and the light-extraction efficiency in a GaN-based blue light-emitting diode by using a rate equation model
Young-Hwan Choi
Guen-Hwan Ryu
Han-Youl Ryu
Journal of the Korean Physical Society, 2016, 69 : 1286 - 1289
[10] Well Thickness Dependence of the Internal Quantum Efficiency and Carrier Concentration in GaN-Based Multiple Quantum Well Light-Emitting Diodes
Kun Zhao
Xiufang Yang
Bing Xu
Ding Li
Cunda Wang
Liefeng Feng
Journal of Electronic Materials, 2016, 45 : 786 - 790

← 1 2 3 4 5 →