Radiation Effects in Flash Memories

被引：117
|
作者：
Gerardin, S. [1 ]
Bagatin, M. [1 ,2 ]
Paccagnella, A. [1 ,2 ]
Gruermann, K. [3 ]
Gliem, F. [3 ]
Oldham, T. R. [4 ]
Irom, F. [5 ]
Nguyen, D. N. [5 ]
机构：
[1] Univ Padua, Dipartimento Ingn Informaz, RREACT Grp, I-35131 Padua, Italy
[2] Ist Nazl Fis Nucl INFN, I-35131 Padua, Italy
[3] Tech Univ Carolo Wilhelmina Braunschweig, Inst Comp & Network Engn, IDA, D-38106 Braunschweig, Germany
[4] Ball Aerosp Technol Ctr, Boulder, CO 80301 USA
[5] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 03期
关键词：
Flash memories; floating gate (FG); single event functional interrupts (SEFI); single event upset (SEU); soft errors; HEAVY-ION IRRADIATION; CHARGE LOSS; COMMERCIAL NAND; EXPOSURE; CELLS; SIO2; RETENTION; PROTON; UPSETS; ENERGY;
D O I：
10.1109/TNS.2013.2254497
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated.
引用
收藏
页码：1953 / 1969
页数：17
相关论文
共 50 条
  • [31] Rank Modulation for Flash Memories
    Jiang, Anxiao
    Mateescu, Robert
    Schwartz, Moshe
    Bruck, Jehoshua
    IEEE TRANSACTIONS ON INFORMATION THEORY, 2009, 55 (06) : 2659 - 2673
  • [32] Effects of crystallographic orientations on the charging time in silicon nanocrystal flash memories
    de Sousa, JS
    Leburton, JP
    Thean, AV
    Freire, VN
    da Silva, EF
    APPLIED PHYSICS LETTERS, 2003, 82 (16) : 2685 - 2687
  • [33] Data Movement in Flash Memories
    Jiang, Anxiao
    Langberg, Michael
    Mateescu, Robert
    Bruck, Jehoshua
    2009 47TH ANNUAL ALLERTON CONFERENCE ON COMMUNICATION, CONTROL, AND COMPUTING, VOLS 1 AND 2, 2009, : 1031 - +
  • [34] Thanks for the Graphene Flash Memories
    不详
    ACS NANO, 2011, 5 (10) : 7693 - 7693
  • [35] On test and diagnostics of flash memories
    Huang, CT
    Yeh, JC
    Shih, YY
    Huang, RF
    Wu, CW
    13TH ASIAN TEST SYMPOSIUM, PROCEEDINGS, 2004, : 260 - 265
  • [36] Rank Modulation for Flash Memories
    Jiang, Anxiao
    Mateescu, Robert
    Schwartz, Moshe
    Bruck, Jehoshua
    2008 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY PROCEEDINGS, VOLS 1-6, 2008, : 1731 - +
  • [37] Geometrical effects on the charge/discharge properties of quantum dot flash memories
    Prada, M
    Harrison, P
    SUPERLATTICES AND MICROSTRUCTURES, 2003, 34 (3-6) : 241 - 244
  • [38] Flash Watermark: An Anticounterfeiting Technique for NAND Flash Memories
    Sakib, Sadman
    Milenkovic, Aleksandar
    Ray, Biswajit
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4172 - 4177
  • [39] On the Capacity and Programming of Flash Memories
    Jiang, Anxiao
    Li, Hao
    Bruck, Jehoshua
    IEEE TRANSACTIONS ON INFORMATION THEORY, 2012, 58 (03) : 1549 - 1564
  • [40] Modulation Coding for Flash Memories
    Kim, Yongjune
    Kumar, B. V. K. Vijaya
    Cho, Kyoung Lae
    Son, Hongrak
    Kim, Jaehong
    Kong, Jun Jin
    Lee, Jaejin
    2013 INTERNATIONAL CONFERENCE ON COMPUTING, NETWORKING AND COMMUNICATIONS (ICNC), 2013,
12345