Radiation Effects in Flash Memories

被引：122
作者：
Gerardin, S. [1 ]
Bagatin, M. [1 ,2 ]
Paccagnella, A. [1 ,2 ]
Gruermann, K. [3 ]
Gliem, F. [3 ]
Oldham, T. R. [4 ]
Irom, F. [5 ]
Nguyen, D. N. [5 ]
机构：
[1] Univ Padua, Dipartimento Ingn Informaz, RREACT Grp, I-35131 Padua, Italy
[2] Ist Nazl Fis Nucl INFN, I-35131 Padua, Italy
[3] Tech Univ Carolo Wilhelmina Braunschweig, Inst Comp & Network Engn, IDA, D-38106 Braunschweig, Germany
[4] Ball Aerosp Technol Ctr, Boulder, CO 80301 USA
[5] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 03期
关键词：
Flash memories; floating gate (FG); single event functional interrupts (SEFI); single event upset (SEU); soft errors; HEAVY-ION IRRADIATION; CHARGE LOSS; COMMERCIAL NAND; EXPOSURE; CELLS; SIO2; RETENTION; PROTON; UPSETS; ENERGY;
D O I：
10.1109/TNS.2013.2254497
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated.
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页码：1953 / 1969
页数：17
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