Radiation Effects in Flash Memories

被引：117
作者：
Gerardin, S. [1 ]
Bagatin, M. [1 ,2 ]
Paccagnella, A. [1 ,2 ]
Gruermann, K. [3 ]
Gliem, F. [3 ]
Oldham, T. R. [4 ]
Irom, F. [5 ]
Nguyen, D. N. [5 ]
机构：
[1] Univ Padua, Dipartimento Ingn Informaz, RREACT Grp, I-35131 Padua, Italy
[2] Ist Nazl Fis Nucl INFN, I-35131 Padua, Italy
[3] Tech Univ Carolo Wilhelmina Braunschweig, Inst Comp & Network Engn, IDA, D-38106 Braunschweig, Germany
[4] Ball Aerosp Technol Ctr, Boulder, CO 80301 USA
[5] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 03期
关键词：
Flash memories; floating gate (FG); single event functional interrupts (SEFI); single event upset (SEU); soft errors; HEAVY-ION IRRADIATION; CHARGE LOSS; COMMERCIAL NAND; EXPOSURE; CELLS; SIO2; RETENTION; PROTON; UPSETS; ENERGY;
D O I：
10.1109/TNS.2013.2254497
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated.
引用
收藏
页码：1953 / 1969
页数：17
相关论文
共 82 条
  • [11] [Anonymous], P IEEE RAD EFF DAT W
  • [12] Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions
    Bagatin, M.
    Gerardin, S.
    Paccagnella, A.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) : 2785 - 2790
  • [13] Destructive events in NAND Flash memories irradiated with heavy ions
    Bagatin, M.
    Gerardin, S.
    Paccagnella, A.
    Cellere, G.
    Irom, F.
    Nguyen, D. N.
    [J]. MICROELECTRONICS RELIABILITY, 2010, 50 (9-11) : 1832 - 1836
  • [14] Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells
    Bagatin, Marta
    Gerardin, Simone
    Paccagnella, Alessandro
    Visconti, Angelo
    Beltrami, Silvia
    Bertuccio, Massimo
    Czeppel, Laura T.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) : 2824 - 2829
  • [15] Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID
    Bagatin, Marta
    Gerardin, Simone
    Paccagnella, Alessandro
    Cellere, Giorgio
    Visconti, Angelo
    Bonanomi, Mauro
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3407 - 3413
  • [16] Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence
    Bagatin, Marta
    Gerardin, Simone
    Cellere, Giorgio
    Paccagnella, Alessandro
    Visconti, Angelo
    Beltrami, Silvia
    Bonanomi, Mauro
    Harboe-Sorensen, Reno
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) : 1835 - 1841
  • [17] Error Instability in Floating Gate Flash Memories Exposed to TID
    Bagatin, Marta
    Gerardin, Simone
    Cellere, Giorgio
    Paccagnella, Alessandro
    Visconti, Angelo
    Bonanomi, Mauro
    Beltrami, Silvia
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) : 3267 - 3273
  • [18] TID Sensitivity of NAND Flash Memory Building Blocks
    Bagatin, Marta
    Cellere, Giorgio
    Gerardin, Simone
    Paccagnella, Alessandro
    Visconti, Angelo
    Beltrami, Silvia
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) : 1909 - 1913
  • [19] Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
    Bagatin, Marta
    Gerardin, Simone
    Cellere, Giorgio
    Paccagnella, Alessandro
    Visconti, Angelo
    Beltrami, Silvia
    Harboe-Sorensen, Reno
    Virtanen, Ari
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) : 3302 - 3308
  • [20] The Role of Atomic Displacements in Ion-Induced Dielectric Breakdown
    Beck, M. J.
    Puzyrev, Y. S.
    Sergueev, N.
    Varga, K.
    Schrimpf, R. D.
    Fleetwood, D. M.
    Pantelides, S. T.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) : 3210 - 3217
123456789