NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications

被引：80

作者：

Jang, Weon Wi ^{[1
]}

Yoon, Jun-Bo ^{[1
]}

Kim, Min-Sang ^{[2
]}

Lee, Ji-Myoung ^{[2
]}

Kim, Sung-Min ^{[2
]}

Yoon, Eun-Jung ^{[2
]}

Cho, Keun Hwi ^{[2
]}

Lee, Sung-Young ^{[2
]}

Choi, In-Hyuk ^{[2
]}

Kim, Dong-Won ^{[2
]}

Park, Donggun ^{[2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Micronano Struct Lab 3D, Taejon 305701, South Korea

[2] Samsung Elect Co, Semicond R&D Ctr, Adv Technol Dev Team 1, Yongin 449711, Kyoungi Do, South Korea

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 10期

关键词：

Nanoelectromechanical systems (NEMS); Zero off current; Abrupt switching; Suspended beam memory (SBM);

D O I：

10.1016/j.sse.2008.06.026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed two types of titanium nitride (TiN) based nanoelectromechanical systems (NEMS) switches with the smallest dimensions ever made by typical "top-down" complementary metaloxide-semiconductor (CMOS) fabrication technology. NEMS cantilever switch (NCLS) and NEMS clamp switch (NCS) with 30 nm-thick TiN beam and 20 nm-thick air-gap were successfully fabricated and electrically characterized. The fabricated NCLS showed ideal on/off current characteristics with an essentially zero off current, a sub-threshold slope of less than 3 mV/decade, and an on/off current ratio over 105 in air ambient. Also, the NCLS exhibited an endurance of over several hundred of switching cycles under dc and ac bias conditions in air ambient. Suspended beam memory (SBM) cell array structure was suggested for high density non-volatile memory applications. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1578 / 1583

页数：6

共 20 条

[1]

Abelé N, 2005, INT EL DEVICES MEET, P1075

[2] A controllable nanomechanical memory element [J].