Novel delta-doped InAlGaP/GaAs heterojunction bipolar transistor(vol 29, pg 671, 2008)

被引：0
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作者：
Lin, Yu-Shyan
Jiang, Jia-Jhen
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来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 10期
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D O I：
10.1109/LED.2008.2005660
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：1171 / 1171
页数：1
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