Resistance of Irradiated by H+ Ions Si in the Temperature Range 77-300 K

被引：0

作者：

Vasiljev, A. ^{[1
]}

Kukharenko, O. ^{[1
]}

Kozonushchenko, O. ^{[1
]}

Vasiliev, T. ^{[1
]}

Tolmachov, M. ^{[2
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Inst High Technol, Kiev, Ukraine

[2] Res Lab Spectra Co TMM Ltd, Kiev, Ukraine

来源：

PROCEEDINGS OF THE 2017 IEEE 7TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP) | 2017年

关键词：

Ion H+; Proton Beam Writing; monocrystal silicon; hydrogen; resistivity; nanoparticles; SUPERCONDUCTIVITY; HYDROGEN;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By the use of PBW (Proton Beam Writing) technology Si monocrystal was irradiated. The energy of ions H+ was 1.5 MeV. The integrated dose was 2.10(15) p/cm(2). The temperature dependence of the sample resistance after irradiation is significantly different from the typical dependence. In the temperature interval 100-150 K the sample resistance is almost unchanged. Resistance of the unirradiated specimen at temperatures below 150 K is less than the irradiated one. In the middle of the sample a layer was formed the temperature dependence of the resistance of which increases with increasing of temperature.

引用

页数：4

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