Effects of growth conditions on structure and dielectric properties of bismuth-magnesium niobate thin films

被引：2
作者：
Gao Libin [1 ]
Jiang Shuwen [1 ]
Li Yanrong [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷
关键词：
cubic pyrochlore; Bi1.5MgNb1.5O7 thin films; tunability; dielectric loss; TUNABILITY;
D O I：
10.1016/j.phpro.2012.03.566
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Bi1.5MgNb1.5O7 (BMN) thin films were prepared on platinum coated sapphire by rf magnetron sputtering deposition. Effects of substrate temperature, sputtering ambient and post rapid thermal annealing on structure, morphologies, and dielectric properties of films were investigated. Thin films have cubic pyrochlore structure when substrate temperature at 650 degrees C or higher. Corresponding to tunable dielectric properties of bismuth based cubic pyrochlore thin films, voltage tunability of Bi1.5MgNb1.5O7 thin films increases with substrate temperature. Bi1.5MgNb1.5O7 thin films exhibit low dielectric loss of similar to 0.0018-0.004. A brief discussion is given on the enhanced tunability of Bi1.5MgNb1.5O7 thin films. The relatively high tunability and low dielectric loss suggest that Bi1.5MgNb1.5O7 thin films have potential application for tunable capacitor applications.
引用
收藏
页码：340 / 344
页数：5
相关论文
共 10 条
  • [1] Dielectric properties and tunability of cubic pyrochlore Bi1.5MgNb1.5O7 thin films
    Jiang, S. W.
    Li, Y. R.
    Li, R. G.
    Xiong, N. D.
    Tan, L. F.
    Liu, X. Z.
    Tao, B. W.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (16)
  • [2] Influence of strain on the dielectric relaxation of pyrochlore bismuth zinc niobate thin films
    Lu, JW
    Klenov, DO
    Stemmer, S
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (06) : 957 - 959
  • [3] Low-loss, tunable bismuth zinc niobate films deposited by rf magnetron sputtering
    Lu, JW
    Stemmer, S
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (12) : 2411 - 2413
  • [4] Bismuth zinc niobate pyrochlore dielectric thin films for capacitive applications
    Ren, W
    Trolier-McKinstry, S
    Randall, CA
    Shrout, TR
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 767 - 774
  • [5] Temperature dependence of the dielectric tunability of pyrochlore bismuth zinc niobate thin films
    Tagantsev, AK
    Lu, JW
    Stemmer, S
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [6] Ferroelectric materials for microwave tunable applications
    Tagantsev, AK
    Sherman, VO
    Astafiev, KF
    Venkatesh, J
    Setter, N
    [J]. JOURNAL OF ELECTROCERAMICS, 2003, 11 (1-2) : 5 - 66
  • [7] Medium permittivity bismuth zinc niobate thin film capacitors
    Thayer, RL
    Randall, CA
    Trolier-McKinstry, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1941 - 1947
  • [8] Silicon substrate integrated high Q-factor parallel-plate ferroelectric varactors for microwave/millimeterwave applications
    Vorobiev, A
    Rundqvist, P
    Khamchane, K
    Gevorgian, S
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3144 - 3146
  • [9] Wang XL, 1997, J AM CERAM SOC, V80, P2745, DOI 10.1111/j.1151-2916.1997.tb03189.x
  • [10] Large dielectric tunability and microwave properties of Mn-doped (Ba,Sr)TiO3 thin films -: art. no. 152901
    Yuan, Z
    Lin, Y
    Weaver, J
    Chen, X
    Chen, CL
    Subramanyam, G
    Jiang, JC
    Meletis, EI
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (15) : 1 - 3
1