Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green's function techniques

被引：46

作者：

Asenov, Asen ^{[1
]}

Brown, Andrew R. ^{[1
]}

Roy, Gareth ^{[1
]}

Cheng, Binjie ^{[1
]}

Alexander, Craig ^{[1
]}

Riddet, Craig ^{[1
]}

Kovac, Urban ^{[1
]}

Martinez, Antonio ^{[1
]}

Seoane, Natalia ^{[1
,2
]}

Roy, Scott ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Santiago de Compostela, Dept Elect & Comp Sci, Santiago De Compostela, Spain

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2009年 / 8卷 / 3-4期

关键词：

Semiconductors; MOSFET; Numerical simulation; Variability; THRESHOLD VOLTAGE FLUCTUATIONS; SUB-100 NM MOSFETS; QUANTUM CORRECTION; ELECTRON-ELECTRON; TRANSPORT; REAL;

D O I：

10.1007/s10825-009-0292-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present models and tools developed and used by the Device Modelling Group at the University of Glasgow to study statistical variability introduced by the discreteness of charge and matter in contemporary and future Nano-CMOS transistors. The models and tools, based on Drift-Diffusion (DD), Monte Carlo (MC) and Non-Equilibrium Green's Function (NEGF) techniques, are encapsulated in the Glasgow 3D statistical 'atomistic' device simulator. The simulator can handle most of the known sources of statistical variability including Random Discrete Dopants (RDD), Line Edge Roughness (LER), Thickness Fluctuations in the Oxide (OTF) and Body (BTF), granularity of the Poly-Silicon (PSG), Metal Gate (MGG) and High-kappa (HKG), and oxide trapped charges (OTC). The results of the statistical simulations are verified with respect to measurements carried out on fabricated devices. Predictions about the magnitude of the statistical variability in future generations of nano-CMOS devices are also presented.

引用

页码：349 / 373

页数：25

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