Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent

被引：10

作者：

Gong, Maogao ^{[1
,4
]}

Xing, Kun ^{[2
]}

Zhang, Yun ^{[1
,3
]}

Liu, Bin ^{[1
,4
]}

Tao, Tao ^{[1
,4
]}

Xie, Zili ^{[1
,4
]}

Zhang, Rong ^{[1
,4
]}

Zheng, Youdou ^{[1
,4
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[2] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Peoples R China

[3] Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Jiangsu, Peoples R China

[4] Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 09期

基金：

中国博士后科学基金;

关键词：

III-nitrides; Semi-polar; Quantum well; Photoluminescence; Internal quantum efficiency; MOCVD; GAN;

D O I：

10.35848/1882-0786/abac91

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports three semi-polar (20-21) InGaN/GaN multiple quantum wells (MQWs) on patterned sapphire substrates. The well and barrier thicknesses are 3.5 nm and 9.5 nm, respectively, and the indium contents are estimated to be from 9% to 26%. As a consequence of its high crystal quality, the semi-polar sample, with an emission wavelength of 460 nm, exhibits an internal quantum efficiency (IQE) of up to 52%, based on photoluminescence (PL) measurements. Furthermore, we find that carriers are confined in deep localization centers, which enable the major carriers to recombine radiatively, even at room temperature.

引用

页数：6

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