Interface Recombination in Depleted Heterojunction Photovoltaics based on Colloidal Quantum Dots

被引：128

作者：

Kemp, Kyle W. ^{[1
]}

Labelle, Andre J. ^{[1
]}

Thon, Susanna M. ^{[1
]}

Ip, Alexander H. ^{[1
]}

Kramer, Illan J. ^{[1
]}

Hoogland, Sjoerd ^{[1
]}

Sargent, Edward H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

ADVANCED ENERGY MATERIALS | 2013年 / 3卷 / 07期

基金：

加拿大自然科学与工程研究理事会;

关键词：

atomic layer deposition; colloidal quantum dots; depleted bulk heterojunction; interface recombination; thin film photovoltaics; SENSITIZED SOLAR-CELLS; EFFICIENCY; DEPOSITION; VOLTAGE; LIGHT;

D O I：

10.1002/aenm.201201083

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2-PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (V-OC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized.

引用

页码：917 / 922

页数：6

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