Effect of annealing temperature on leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method

被引：0
|
作者：
Jun Yu [1 ]
Guo Dong-yun [1 ]
Wang Yun-bo [1 ]
Gao Jun-xiong [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2006年 / 79卷
基金：
中国国家自然科学基金;
关键词：
Bi3.25La0.75Ti3O12; ferroelectric thin film; sol-gel method; leakage current;
D O I：
10.1080/10584580600657575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bi3.25La0.75Ti3O12 films are prepared on Pt/Ti/SiO2/Si substrate by Sol-Gel method. The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated and the single perovskite phase is obtained at 550 degrees C annealed. The ferroelectric properties and leakage current characteristics are studied. The remnant polarization increases and the coercive field decreases with the annealing temperature increasing. The leakage current density of the BLT films annealed at 700 degrees C is about 5.8 x 10(-8) A/cm 2 at 250 kV/cm. There are unambiguously differentiated mechanisms responsible for electrical transport at different electric field regimes in the BLT films.
引用
收藏
页码：97 / 103
页数：7
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