Potential fluctuations in compensated chalcopyrites

被引：47

作者：

Siebentritt, S

Papathanaslou, N

Lux-Steiner, MC

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

[2] Free Univ Berlin, Dept Phys, D-1000 Berlin, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

chalcopyrites; solar cells; photoluminescence; compensation;

D O I：

10.1016/j.physb.2005.12.208

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Cu-poor chalcopyrites are highly compensated and their band structure is dominated by fluctuating potentials. Since solar cell absorbers are made from these materials, a quantitative analysis of the amplitude of the fluctuations is needed. Photoluminescence measurements of CuInSe2 and CuGaSe2 with varying Cu deficiency offer a tool to access the fluctuations amplitude. The amplitude is found in both cases to increase with increasing Cu deficiency. There appears a trend for lower fluctuation amplitudes in CuInSe2 than CuGaSe2, at least for material close to stoichiometry. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：831 / 833

页数：3

共 14 条

[1] Radiative recombination via intrinsic defects in CuxGaySe2 [J].

Bauknecht, A ;

Siebentritt, S ;

Albert, J ;

Lux-Steiner, MC .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) :4391-4400

[2] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].

KANE, EO .

PHYSICAL REVIEW, 1963, 131 (01) :79-&

[3]

LEVANYUK AP, 1973, SOV PHYS SEMICOND+, V7, P721

[4] BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS [J].

MORGAN, TN .

PHYSICAL REVIEW, 1965, 139 (1A) :A343-&

[5] Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells [J].

Ramanathan, K ;

Contreras, MA ;

Perkins, CL ;

Asher, S ;

Hasoon, FS ;

Keane, J ;

Young, D ;

Romero, M ;

Metzger, W ;

Noufi, R ;

Ward, J ;

Duda, A .

PROGRESS IN PHOTOVOLTAICS, 2003, 11 (04) :225-230

[6] MOVPE of epitaxial CuInSe2 on GaAs [J].

Rega, N ;

Siebentritt, S ;

Beckers, I ;

Beckmann, J ;

Albert, J ;

Lux-Steiner, M .

JOURNAL OF CRYSTAL GROWTH, 2003, 248 :169-174

[7] Self-compensation of intrinsic defects in the ternary semiconductor CuGaSe2 -: art. no. 045210 [J].

Schuler, S ;

Siebentritt, S ;

Nishiwaki, S ;

Rega, N ;

Beckmann, J ;

Brehme, S ;

Lux-Steiner, MC .

PHYSICAL REVIEW B, 2004, 69 (04)

[8]

Shklovskii B. I., 2013, Electronic Properties of Doped Semiconductors, V45

[9]

SHKLOVSKII BI, 1971, SOV PHYS JETP-USSR, V33, P468

[10] Do we really need another PL study of CuInSe2? [J].

Siebentritt, S ;

Rega, N ;

Zajogin, A ;

Lux-Steiner, MC .

CONFERENCE ON PHOTO-RESPONSIVE MATERIALS, PROCEEDINGS, 2004, :2304-2310

← 1 2 →