High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

被引：11

作者：

Liao, Chan-Yu ^{[1
]}

Chen, Shih-Hung ^{[1
]}

Huang, Wen-Hsien ^{[2
]}

Shen, Chang-Hong ^{[2
]}

Shieh, Jia-Min ^{[2
]}

Cheng, Huang-Chung ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Nano Device Labs, Natl Appl Res Labs, Hsinchu 30078, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 03期

关键词：

Germanium (Ge); excimer laser crystallization (ELC); location-controlledgrain boundary (LCGB); thin-film transistor (TFT); SI-TFT; MOBILITY; SOURCE/DRAIN; TECHNOLOGY; GRAIN;

D O I：

10.1109/LED.2018.2791506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grainswith a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from unmelted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect holemobility of 447 cm(2)V(-1)s(-1) with minor performance deviation.

引用

页码：367 / 370

页数：4

共 28 条

[1]

[Anonymous], 2011, IEEE INTERNATIONALEL

[2]

[Anonymous], 2006, PHYS SEMICONDUCTOR D

[3]

Batude P., 2011, 2011 International Electron Devices Meeting, p7.3.1, DOI DOI 10.1109/IEDM.2011.6131506

[4] ANALYSIS OF LATTICE AND IONIZED IMPURITY SCATTERING IN P-TYPE GERMANIUM [J].

BROWN, DM ;

BRAY, R .

PHYSICAL REVIEW, 1962, 127 (05) :1593-&

[5] Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions [J].

Eneman, Geert ;

Wiot, Maxime ;

Brugere, Antoine ;

Sicart I Casain, O. Oriol ;

Sonde, Sushant ;

Brunco, David P. ;

De Jaeger, Brice ;

Satta, Alessandra ;

Hellings, Geert ;

De Meyer, Kristin ;

Claeys, Cor ;

Meuris, Marc ;

Heyns, Marc M. ;

Simoen, Eddy .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (09) :2287-2296

[6] Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy [J].

Hosoi, Takuji ;

Suzuki, Yuichiro ;

Shimura, Takayoshi ;

Watanabe, Heiji .

APPLIED PHYSICS LETTERS, 2014, 105 (17)

[7] Advanced excimer-laser crystallization process for single-crystalline thin film transistors [J].

Ishihara, R ;

van der Wilt, PC ;

van Dijk, BD ;

Burtsev, A ;

Metselaar, JW ;

Beenakker, CIM .

THIN SOLID FILMS, 2003, 427 (1-2) :77-85

[8]

Kamata Yoshiki, 2013, 2013 Symposium on VLSI Technology, pT94

[9]

Lee C.H., 2010, Proc. of IEEE IEDM Tech Digest, P416

[10] A Novel SONOS Memory With Recessed-Channel Poly-Si TFT via Excimer Laser Crystallization [J].

Lee, I-Che ;

Tsai, Chun-Chien ;

Kuo, Hsu-Hang ;

Yang, Po-Yu ;

Wang, Chao-Lung ;

Cheng, Huang-Chung .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) :558-560

← 1 2 3 →