2DEG modulation in double quantum well enhancement mode nitride HEMT

被引：18

作者：

Bag, Ankush ^{[1
]}

Das, Palash ^{[1
]}

Kumar, Rahul ^{[1
]}

Mukhopadhyay, Partha ^{[1
]}

Majumdar, Shubhankar ^{[1
]}

Kabi, Sanjib ^{[1
]}

Biswas, Dhrubes ^{[2
]}

机构：

[1] Indian Inst Technol, Adv Technol Dev Ctr, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2015年 / 74卷

关键词：

Energy band bending; Enhancement mode; HEMT; Nitride; Quantum well; ALGAN/GAN HEMTS;

D O I：

10.1016/j.physe.2015.06.011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A double quantum well (QW) based nitride HEMT has been conceptualized through numerical simulation of Schrodinger and Poisson's equations for enhancement mode operation by introduction of a deeper secondary QW along with primary AlGaN/GaN triangular potential well The carriers for drain current are populated in the shallower primary QW through energy band bending with positive V-GS. Participation of the concerned QW in drain current conduction depends upon the magnitude of the band offsets and polarization effects of the materials. Effect of the gate bias on energy band delineates the modulation of 2DEG carriers in the shallow energy quantum well from 1.6 x 10(-3) cm(-3) to 9.47 x cm(-3) with gate bias from 0.5 V to 1.0 V to confirm the drain current conduction with Vth > +05 V at typical depth of source and drain Ohmic contacts. (C) 2015 Elsevier B.V. All rights reserved

引用

页码：59 / 64

页数：6

共 23 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Ambacher, O
Smart, J
Shealy, JR
Weimann, NG
Chu, K
Murphy, M
Schaff, WJ
Eastman, LF
Dimitrov, R
Wittmer, L
Stutzmann, M
Rieger, W
Hilsenbeck, J
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3222 - 3233
[2] Bin Lu, 2010, 2010 68th Annual Device Research Conference (DRC 2010), P193, DOI 10.1109/DRC.2010.5551907
[3] High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Cai, Y
Zhou, YG
Chen, KJ
Lau, KM
[J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) : 435 - 437
[4] Cai Yong, 2006, IEEE T ELECT DEVICES, V53
[5] Colangeli S., 2013, IEEE T ELECTRON DEV, V60
[6] Delagebeaudeuf D., 1982, IEEE T ELECT DEVICES, V29
[7] Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
Honda, Y
Kuroiwa, Y
Yamaguchi, M
Sawaki, N
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (02) : 222 - 224
[8] Hussain T., 2003, ELECT LETT, V39
[9] Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Ibbetson, JP
Fini, PT
Ness, KD
DenBaars, SP
Speck, JS
Mishra, UK
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (02) : 250 - 252
[10] Normally Off Single-Nanoribbon Al2O3/GaN MISFET
Im, Ki-Sik
Kim, Ryun-Hwi
Kim, Ki-Won
Kim, Dong-Seok
Lee, Chun Sung
Cristoloveanu, Sorin
Lee, Jung-Hee
[J]. IEEE ELECTRON DEVICE LETTERS, 2013, 34 (01) : 27 - 29

← 1 2 3 →