Demonstration and analysis of accumulation-mode double-gate metal-oxide-semiconductor field-effect transistor

被引：4

作者：

Masahara, Meishoku ^{[1
]}

Endo, Kazuhiko ^{[1
]}

Liu, Yongxun ^{[1
]}

Matsukawa, Takashi ^{[1
]}

O'uchi, Shinichi ^{[1
]}

Ishii, Kenichi ^{[1
]}

Sugimata, Etsuro ^{[1
]}

Suzuki, Eiichi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期

关键词：

vertical DG-MOSFET; accumulation mode; inversion mode; channel thickness; channel body doping concentration; short-channel effects; subthreshold slope; threshold voltage;

D O I：

10.1143/JJAP.45.3079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The property of an accumulation-mode double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) has thoroughly been investigated on the basis of experimental data and simulation results. Both accumulation- and inversion-mode DG-MOSFETs have been fabricated by novel vertical DG-MOSFET fabrication process technology. It is experimentally demonstrated that accumulation- mode DG-MOSFETs show a severe influence of channel thickness (T-Si) on threshold voltage (V-th) and subthreshold slope (S) as compared with inversion-mode ones. By decreasing T-Si, however, S is dramatically improved to the same value as that for the inversion-mode one. The short-channel effects (SCEs) for the accumulation-mode DG-MOSFETs have been explored using device simulation. The simulation result shows that, by decreasing T-Si to 10 nm, the trend of the SCEs for the accumulation-mode DG-MOSFETs becomes the same as that for the inversion-mode one down to an effective gate length of 10 nm. It is also demonstrated that, by using n(+)-DGs, an appropriate Vth as well as a low S can be attained for an accumulation-mode PMOS vertical DG-MOSFET.

引用

页码：3079 / 3083

页数：5

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