Packageless AlN/ZnO/Si Structure for SAW Devices Applications

被引：29

作者：

Legrani, Ouarda ^{[1
]}

Elmazria, Omar ^{[1
]}

Zhgoon, Sergei ^{[2
]}

Pigeat, Philippe ^{[1
]}

Bartasyte, Ausrine ^{[1
]}

机构：

[1] Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54506 Vandoeuvre Les Nancy, France

[2] Moscow Power Engn Inst, Moscow 111250, Russia

来源：

IEEE SENSORS JOURNAL | 2013年 / 13卷 / 02期

关键词：

AlN; finite element method (FEM); packageless structure; surface acoustic wave (SAW); ZnO;

D O I：

10.1109/JSEN.2012.2219692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The possibility to perform a packageless structure for acoustic wave sensors applications based on AlN/interdigital transducer/ZnO/Si structure was investigated. The effect of thicknesses of AlN and ZnO thin films on structure performance was simulated by 2-D finite element method. Theoretical predictions were confirmed by in-situ measurements of frequency, insertion loss, and thickness during deposition of AlN layer on ZnO/Si.

引用

页码：487 / 491

页数：5

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