Quantitative Study on Operation Frequency Limitation of Multi-level High Voltage Power Converter Equipped with Si-IEGT and SiC-PiN Diode

被引：3
|
作者：
Kinjo, T. [1 ]
Takao, K. [2 ]
Tanaka, Y. [1 ]
Sung, K. [3 ]
Ohashi, H. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan
[2] Toshiba Co Ltd, Kawasaki, Kanagawa, Japan
[3] Ibaraki Natl Coll Technol, Hitachinaka, Ibaraki, Japan
来源：
2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10 | 2008年
关键词：
D O I：
10.1109/PESC.2008.4592391
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper has quantitatively investigated the operation frequency limitation of high voltage NPC 3-level converter with 4.5kV Si-IEGT and 5kV SiC-PiN diode hybrid pair. In order to investigate the limitation, the high speed switching capability of the hybrid pair under a hard drive condition is evaluated, and an exact power loss estimation method is proposed to estimate the power losses of NPC 3-level converter with high voltage bipolar power devices. The possibility of high frequency operation in NPC 3-level converter with the hybrid pair under the hard drive condition is revealed by using the power loss estimation method.
引用
收藏
页码：2909 / +
页数：2
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