High-quality epitaxial NbN/AlN/NbN tunnel junctions with a wide range of current density

被引：46

作者：

Wang, Z. ^{[1
]}

Terai, H. ^{[1
]}

Qiu, W. ^{[1
]}

Makise, K. ^{[1
]}

Uzawa, Y. ^{[2
]}

Kimoto, K. ^{[3
]}

Nakamura, Y. ^{[4
,5
]}

机构：

[1] Natl Inst Informat & Commun Technol, Kobe, Hyogo 6512492, Japan

[2] Natl Inst Nat Sci, Natl Astron Observ Japan, Mitaka, Tokyo 1818588, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[4] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538904, Japan

[5] RIKEN, Adv Sci Inst, Wako, Saitama 3510198, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 14期

关键词：

SUPERCONDUCTING PROPERTIES; ELECTRONIC-STRUCTURE; CRYSTAL-STRUCTURES; SINGLE-CRYSTAL; THIN-FILMS; TEMPERATURE; FABRICATION; ALN;

D O I：

10.1063/1.4801972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed high-quality epitaxial NbN/AlN/NbN Josephson tunnel junctions with a wide range of current density J(c). The junctions show excellent tunneling properties with a large gap voltage of 5.6 mV and a large IcRN product of 3.5 mV. The quality factor R-sg/R-N is about 60 for the junctions with a J(c) of 2.2 A/cm(2), and above 10 for the junctions with a J(c) of 25 kA/cm(2). The crystal structures across the junction barrier are investigated using x-ray diffraction and cross-sectional scanning transmission electron microscopy, and demonstrate epitaxial growth of the NbN/AlN/NbN trilayers for the wide range of J(c). (C) 2013 AIP Publishing LLC

引用

页数：4

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