Semiconductor to Metal Transition Study of Oxidized Vanadium Thin film

被引：0

作者：

Yu, Shifeng ^{[1
]}

Wang, Shuyu ^{[2
]}

Lu, Ming ^{[3
]}

Zuo, Lei ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Dept Mech Engn, Blacksburg, VA 24061 USA

[2] SUNY Stony Brook, Dept Mech Engn, Stony Brook, NY 11794 USA

[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

PROCEEDINGS OF THE ASME INTERNATIONAL DESIGN ENGINEERING TECHNICAL CONFERENCES AND COMPUTERS AND INFORMATION IN ENGINEERING CONFERENCE, 2017, VOL 4 | 2017年

关键词：

MOTT TRANSITION; FABRICATION; OPTIMIZATION; DIOXIDE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Since vanadium atom has a half-filled d-shell, there exist a set of valence states to form a number of oxide phases. In this paper, the deposited vanadium thin film is oxidized under different conditions. The electrical characterization shows some oxides of vanadium undergo a transition from semiconductor state to a metal phase at a critical temperature. Such vanadium oxides have potential use, particularly in thin film form, for a wide variety of applications involving thermally activated electronic switching devices. The surface morphology is studied under SEM. The temperature coefficient of resistivity of other vanadium oxide states is studied as well.

引用

页数：5

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