Super Steep Subthreshold Slope PN-Body Tied SOI FET for Ultra Low Power IoT Edge Applications

被引：0
|
作者：
Ida, Jiro [1 ]
Mori, Takayuki [1 ]
机构：
[1] Kanazawa Inst Technol, Div Elect Engn, 7-1 Ohgigaoka, Nonoichi, Ishikawa 9218501, Japan
来源：
PROCEEDINGS OF 2017 7TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, DESIGN, AND VERIFICATION (ICDV) | 2017年
关键词：
Steep Subthreshold Slope; SOI MOSFET; Floating Body Effect;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have proposed a super steep Subthreshold Slope (SS) "PN-Body Tied SOI-FET". It shows the super steep SS (similar to 35 mu V/dec) over 3 to 5 decades of the drain current with an ultra-low drain voltage down to 0.1V. We have also improved it to reduce the operating body voltage below 1V and have clarified that the floating body effect of the SOI is a key mechanism for appearance of a super steep SS. The research status on the device was reviewed, here.
引用
收藏
页码：56 / 57
页数：2
相关论文
共 45 条
  • [41] Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A numerical simulation study
    Vadizadeh, Mahdi
    Fallahnejad, Mohammad
    Sotoodeh, Pegah
    Ejlali, Reyhaneh
    Azadmanesh, Mahdis
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2023, 292
  • [42] Excellent threshold switching device (IOFF ∼1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (VDD=0.25 V) FET applications
    Lim, Seokjae
    Yoo, Jongmyung
    Song, Jeonghwan
    Woo, Jiyong
    Park, Jaehyuk
    Hwang, Hyunsang
    2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [43] Performance Analysis of Fully Depleted Ultra Thin-Body (FD UTB) SOI MOSFET Based CMOS Inverter Circuit for Low Power Digital Applications
    Mishra, Vimal Kumar
    Chauhan, R. K.
    INFORMATION SYSTEMS DESIGN AND INTELLIGENT APPLICATIONS, VOL 2, INDIA 2016, 2016, 434 : 375 - 382
  • [44] A 8.1-nW, 4.22-kHz,-40-85 °C relaxation oscillator with subthreshold leakage current compensation and forward body bias buffer for low power IoT applications
    Zhou, Rong
    Wang, Linwei
    Yang, Jianhang
    Li, Zhen
    Zhao, Xiaoteng
    Liu, Shubin
    MICROELECTRONICS JOURNAL, 2024, 144
  • [45] A 14.3pW Sub-Threshold 2T Gain-Cell eDRAM for Ultra-Low Power IoT Applications in 28nm FD-SOI
    Giterman, Robert
    Teman, Adam
    Fish, Alexander
    2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2018,
12345