Super Steep Subthreshold Slope PN-Body Tied SOI FET for Ultra Low Power IoT Edge Applications

被引：0
|
作者：
Ida, Jiro [1 ]
Mori, Takayuki [1 ]
机构：
[1] Kanazawa Inst Technol, Div Elect Engn, 7-1 Ohgigaoka, Nonoichi, Ishikawa 9218501, Japan
来源：
PROCEEDINGS OF 2017 7TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, DESIGN, AND VERIFICATION (ICDV) | 2017年
关键词：
Steep Subthreshold Slope; SOI MOSFET; Floating Body Effect;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have proposed a super steep Subthreshold Slope (SS) "PN-Body Tied SOI-FET". It shows the super steep SS (similar to 35 mu V/dec) over 3 to 5 decades of the drain current with an ultra-low drain voltage down to 0.1V. We have also improved it to reduce the operating body voltage below 1V and have clarified that the floating body effect of the SOI is a key mechanism for appearance of a super steep SS. The research status on the device was reviewed, here.
引用
收藏
页码：56 / 57
页数：2
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