Formation of a p-n junction and electrode in silicon con carbide at room temperature using a pulsed laser doping method

被引：0

作者：

Eryu, O ^{[1
]}

Nakashima, K ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO 14, MARCH 1996 | 1996年

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：141 / 146

页数：6

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