Heavily p-type silicon carbide thick layer growth by low-temperature liquid phase epitaxy

被引：1
作者：
Tanaka, A [1 ]
Katsuno, H [1 ]
机构：
[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 1A期
关键词：
SiC; liquid phase epitaxy; low-temperature growth; p(+) doping;
D O I：
10.1143/JJAP.45.32
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By reacting Al-Si solution with propane gas at 1000 degrees C, thick p(+)-type epitaxial layers on a 4H-SiC substrate were grown. The layers with a thickness of about 20 to 60 pm were formed after a growth period of 8 h using solutions of 0.2 to 0.4 Si atom fractions. At composition ratios in the layers were around 1 at. %, and the hole concentrations were in the range of 10(20)-10(21) cm(-3).
引用
收藏
页码：32 / 35
页数：4
相关论文
共 19 条
  • [1] Aluminium-silicon as a melt for the low temperature growth of SiC crystals
    Chaussende, D
    Jacquier, C
    Ferro, G
    Viala, JC
    Cauwet, F
    Monteil, Y
    [J]. SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 85 - 88
  • [2] Hobgood D, 2000, MATER SCI FORUM, V338-3, P3, DOI 10.4028/www.scientific.net/MSF.338-342.3
  • [3] SEMIINSULATING 6H-SIC GROWN BY PHYSICAL VAPOR TRANSPORT
    HOBGOOD, HM
    GLASS, RC
    AUGUSTINE, G
    HOPKINS, RH
    JENNY, J
    SKOWRONSKI, M
    MITCHEL, WC
    ROTH, M
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (11) : 1364 - 1366
  • [4] SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC
    IKEDA, M
    MATSUNAMI, H
    TANAKA, T
    [J]. PHYSICAL REVIEW B, 1980, 22 (06): : 2842 - 2854
  • [5] On the growth of 4H-SiC by low-temperature liquid phase epitaxy in Al rich Al-Si melts
    Jacquier, C
    Ferro, G
    Cauwet, F
    Viala, JC
    Younes, G
    Monteil, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 254 (1-2) : 123 - 130
  • [6] Step-controlled epitaxial growth of SiC: high quality homoepitaxy
    Matsunami, H
    Kimoto, T
    [J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1997, 20 (03) : 125 - 166
  • [7] Müller SG, 2002, MATER SCI FORUM, V389-3, P23, DOI 10.4028/www.scientific.net/MSF.389-393.23
  • [8] PHASE-EQUILIBRIA IN THE AL-SI-C SYSTEM
    ODEN, LL
    MCCUNE, RA
    [J]. METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1987, 18 (12): : 2005 - 2014
  • [9] Growth and defect reduction of bulk SiC crystals
    Ohtani, N
    Fujimoto, T
    Katsuno, M
    Aigo, T
    Yashiro, H
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 29 - 34
  • [10] Nitrogen incorporation kinetics during the sublimation growth of 6H and 4H SiC
    Onoue, K
    Nishikawa, T
    Katsuno, M
    Ohtani, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4A): : 2240 - 2243
12