Characterization of sol-gel PZT capacitors with SrRuO3 and Pt electrodes

被引：6
|
作者：
Cross, JS [1 ]
Fujiki, M [1 ]
Sakai, T [1 ]
Tsukada, M [1 ]
Kamehara, N [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi 24301, Japan
来源：
ELECTROCERAMICS IN JAPAN I | 1999年 / 157-1卷
关键词：
D O I：
10.4028/www.scientific.net/KEM.157-158.181
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Pb(Zr,Ti)O-3, [PZT] capacitors were prepared from sol-gel solutions on sputtered Pt and bi-layer SrRuO3,/Pt (SRO) electrodes. The SRO was deposited at room temperature and crystallized by annealing at 600 degrees C. A 300 nm thick PZT capacitor had a higher polarization and lower leakage current with a bi-layer SRO/Pt electrode than with Pt alone. The Pt/PZT/Pt capacitor showed signs of fatigue after 10(4) cycles whereas a Pt/SRO/PZT/SRO/Pt capacitor showed little fatigue even after 10(8) cycles. Because of these and other favorable properties of PZT on the SRO/Pt bi-layer, this structure appears to have applications in a ferroelectric memory.
引用
收藏
页码：181 / 187
页数：7
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