Electronic and Optical Properties of AgMX2 (M= Al, Ga, In; X= S, Se, Te)

被引：4
|
作者：
Jayalakshmi, V. [1 ]
Mageswari, S. [2 ]
Palanivel, B. [2 ]
机构：
[1] SRM Univ, Dept Phys, Ramapuram Campus, Madras 600089, Tamil Nadu, India
[2] Pondicherry Engn Coll, Dept Phys, Pondicherry 605014, India
来源：
SOLID STATE PHYSICS, PTS 1 AND 2 | 2012年 / 1447卷
关键词：
Chalcopyrite Compounds; Electronic Structure and optical properties;
D O I：
10.1063/1.4710385
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Electronic properties of chalcopyrite AgMX2 (M= Al, Ga, In; X= S, Se, Te) compounds are studied theoretically by means of full potential Linear Muffin Tin Orbital Method. The equilibrium volume, bulk modulus and indirect energy band gap for the compounds are calculated and compared with the available data and found to be in good agreement. The structural as well as optical properties like dielectric functions, degree of anisotropy and refractive index are also calculated.
引用
收藏
页码：1087 / +
页数：2
相关论文
共 50 条
  • [41] First-principles calculations of electronic structure, optical and elastic properties of LiGaX2 (X = S, Se, Te)
    Chen Hai-Chuan
    Yang Li-Jun
    ACTA PHYSICA SINICA, 2011, 60 (01)
  • [42] Theoretical prediction of electronic, transport, optical, and thermoelectric properties of Janus monolayers In2XO (X = S, Se, Te)
    Vu, Tuan V.
    Nguyen, Chuong, V
    Phuc, Huynh, V
    Lavrentyev, A. A.
    Khyzhun, O. Y.
    Hieu, Nguyen, V
    Obeid, M. M.
    Rai, D. P.
    Tong, Hien D.
    Hieu, Nguyen N.
    PHYSICAL REVIEW B, 2021, 103 (08)
  • [43] Growth of new nonlinear crystals LiMX2 (M = Al, In, Ga; X = S, Se, Te) for the mid-IR optics
    Isaenko, L
    Vasilyeva, I
    Merkulov, A
    Yelisseyev, A
    Lobanov, S
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : 217 - 223
  • [44] Electronic and structural properties of zinc chalcogenides ZnX (X=S, Se, Te)
    Gangadharan, R
    Jayalakshmi, V
    Kalaiselvi, J
    Mohan, S
    Murugan, R
    Palanivel, B
    JOURNAL OF ALLOYS AND COMPOUNDS, 2003, 359 (1-2) : 22 - 26
  • [45] Structural, electronic and optical properties of ZnX and CdX compounds (X = Se, Te and S) under hydrostatic pressure
    Nourbakhsh, Z.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 505 (02) : 698 - 711
  • [46] Structural, phonon, optical, electronic, and thermodynamic properties of NpX (X = S, Se, Te) chalcogenides: A DFT study
    Bakar, Abu
    Hussain, Sadam
    Mustafa, Ghulam M.
    Ahmad, Rana Ali
    Quader, Abdul
    Imran, Muhammad
    Shaaban, Ibrahim A.
    COMPUTATIONAL CONDENSED MATTER, 2024, 39
  • [47] First-Principle Investigations on the Electronic and Transport Properties of PbBi2Te2X2 (X = S/Se/Te) Monolayers
    Ma, Weiliang
    Tian, Jing
    Boulet, Pascal
    Record, Marie-Christine
    NANOMATERIALS, 2021, 11 (11)
  • [48] Valley-Dependent Electronic Properties of Metal Monochalcogenides GaX and Janus Ga2XY (X, Y = S, Se, and Te)
    Kim, Junghwan
    Kim, Yunjae
    Sung, Dongchul
    Hong, Suklyun
    NANOMATERIALS, 2024, 14 (15)
  • [49] Group III monochalcogenide of single-layered haeckelites structure MX (M = Al, Ga, In; X = S, Se, Te)
    Liu Hui-Ying
    Wang Shu-Shen
    Lin Heng-Fu
    ACTA PHYSICA SINICA, 2020, 69 (14)
  • [50] Electronic structures of of PuX (X=S, Se, Te)
    Maehira, Takahiro
    Sakai, Eijiro
    Tatetsu, Yasutomi
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 63 (03) : 809 - 811
12345