Electronic and Optical Properties of AgMX2 (M= Al, Ga, In; X= S, Se, Te)

被引：4
|
作者：
Jayalakshmi, V. [1 ]
Mageswari, S. [2 ]
Palanivel, B. [2 ]
机构：
[1] SRM Univ, Dept Phys, Ramapuram Campus, Madras 600089, Tamil Nadu, India
[2] Pondicherry Engn Coll, Dept Phys, Pondicherry 605014, India
来源：
SOLID STATE PHYSICS, PTS 1 AND 2 | 2012年 / 1447卷
关键词：
Chalcopyrite Compounds; Electronic Structure and optical properties;
D O I：
10.1063/1.4710385
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Electronic properties of chalcopyrite AgMX2 (M= Al, Ga, In; X= S, Se, Te) compounds are studied theoretically by means of full potential Linear Muffin Tin Orbital Method. The equilibrium volume, bulk modulus and indirect energy band gap for the compounds are calculated and compared with the available data and found to be in good agreement. The structural as well as optical properties like dielectric functions, degree of anisotropy and refractive index are also calculated.
引用
收藏
页码：1087 / +
页数：2
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