Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices

被引:45
作者
Huang, Edward Kwei-wei [1 ]
Hoang, Minh-Anh [1 ]
Chen, Guanxi [1 ]
Ramezani-Darvish, Shaban [1 ]
Haddadi, Abbas [1 ]
Razeghi, Manijeh [1 ]
机构
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
关键词
D O I
10.1364/OL.37.004744
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report a two-color mid-wave infrared (MWIR) and long-wave infrared (LWIR) co-located detector with 3 mu m active region thickness per channel that is highly selective and can perform under high operating temperatures for the MWIR band. Under back-side illumination, a temperature evolution study of the MWIR detector's electro-optical performance found the 300 K background-limit with 2 pi field-of-view to be achieved below operating temperatures of 160 K, at which the temperature's 50% cutoff wavelength was 5.2 mu m. The measured current reached the system limit of 0.1 pA at 110 K for 30 mu m pixel-sized diodes. At 77 K, where the LWIR channel operated with a 50% cutoff wavelength at 11.2 mu m, an LWIR selectivity of similar to 17% was achieved in the MWIR wave band between 3 and 4.7 mu m, making the detector highly selective. (C) 2012 Optical Society of America
引用
收藏
页码:4744 / 4746
页数:3
相关论文
共 10 条
  • [1] Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer
    Binh-Minh Nguyen
    Chen, Guanxi
    Minh-Anh Hoang
    Razeghi, Manijeh
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (05) : 686 - 690
  • [2] Dual band QWIP MWIR/LWIR focal plane array test results
    Goldberg, A
    Fischer, T
    Kennerly, S
    Wang, S
    Sundaram, M
    Uppal, P
    Winn, M
    Milne, G
    Stevens, M
    [J]. INFRARED DETECTORS AND FOCAL PLANE ARRAYS VI, 2000, 4028 : 276 - 287
  • [3] Towards dualband megapixel QWIP focal plane arrays
    Gunapala, S. D.
    Bandara, S. V.
    Liu, J. K.
    Mumolo, J. M.
    Hill, C. J.
    Rafol, S. B.
    Salazar, D.
    Woolaway, J.
    LeVan, P. D.
    Tidrow, M. Z.
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2007, 50 (2-3) : 217 - 226
  • [4] Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes
    Hoffman, Darin
    Nguyen, Binh-Minh
    Delaunay, Pierre-Yves
    Hood, Andrew
    Razeghi, Manijeh
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (14)
  • [5] The effect of doping the M-barrier in very long-wave type-II InAs/GaSb heterodiodes
    Hoffman, Darin
    Nguyen, Binh-Minh
    Huang, Edward Kwei-wei
    Delaunay, Pierre-Yves
    Razeghi, Manijeh
    Tidrow, Meimei Z.
    Pellegrino, Joe
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (03)
  • [6] Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance
    Huang, Edward Kwei-wei
    Haddadi, Abbas
    Chen, Guanxi
    Binh-Minh Nguyen
    Minh-Anh Hoang
    McClintock, Ryan
    Stegall, Mark
    Razeghi, Manijeh
    [J]. OPTICS LETTERS, 2011, 36 (13) : 2560 - 2562
  • [7] Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm
    Nguyen, Binh-Minh
    Hoffman, Darin
    Wei, Yajun
    Delaunay, Pierre-Yves
    Hood, Andrew
    Razeghi, Manijeh
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (23)
  • [8] High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
    Pour, S. Abdollahi
    Huang, E. K.
    Chen, G.
    Haddadi, A.
    Nguyen, B. -M.
    Razeghi, M.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (14)
  • [9] Razeghi M., 2005, U.S. patent, Patent No. 6864552
  • [10] Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes
    Vurgaftman, I.
    Aifer, E. H.
    Canedy, C. L.
    Tischler, J. G.
    Meyer, J. R.
    Warner, J. H.
    Jackson, E. M.
    Hildebrandt, G.
    Sullivan, G. J.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (12)