A fully-differential zero-crossing-based 1.2V 1.0b 26MS/s pipelined ADC in 65nm CMOS
被引:47
作者:
Shin, Soon-Kyun
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机构:
Samsung Elect, Yongin, South KoreaSamsung Elect, Yongin, South Korea
Shin, Soon-Kyun
[1
]
You, Yong-Sang
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机构:
Samsung Elect, Yongin, South KoreaSamsung Elect, Yongin, South Korea
You, Yong-Sang
[1
]
Lee, Seung-Hoon
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机构:
Samsung Elect, Yongin, South KoreaSamsung Elect, Yongin, South Korea
Lee, Seung-Hoon
[1
]
Moon, Kyoung-Ho
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机构:
Samsung Elect, Yongin, South KoreaSamsung Elect, Yongin, South Korea
Moon, Kyoung-Ho
[1
]
Kim, Jae-Whui
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机构:
Samsung Elect, Yongin, South KoreaSamsung Elect, Yongin, South Korea
Kim, Jae-Whui
[1
]
Brooks, Lane
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机构:
MIT, Cambridge, MA 02139 USASamsung Elect, Yongin, South Korea
Brooks, Lane
[2
]
Lee, Hae-Seung
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机构:
MIT, Cambridge, MA 02139 USA
Cambridge Analog Technol, Bedford, MA USASamsung Elect, Yongin, South Korea
Lee, Hae-Seung
[2
,3
]
机构:
[1] Samsung Elect, Yongin, South Korea
[2] MIT, Cambridge, MA 02139 USA
[3] Cambridge Analog Technol, Bedford, MA USA
来源:
2008 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS
|
2008年
关键词:
D O I:
10.1109/VLSIC.2008.4586013
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A fully-differential zero-crossing-based 10b 26MS/s pipelined ADC in a 65 nm CMOS process is presented. Switched-capacitor overshoot correction is compatible with the differential topology and allows faster operation. A CMFB is engaged in the coarse phase for constant common-mode. The 0.33mm(2) ADC achieves 54.3dB SNDR with a FOM of 161 fJ/step.