In-plane topological p-n junction in the three-dimensional topological insulator Bi2-xSbxTe3-ySey

被引：46

作者：

Tu, Ngoc Han ^{[1
]}

Tanabe, Yoichi ^{[1
]}

Satake, Yosuke ^{[1
]}

Huynh, Khuong Kim ^{[2
]}

Tanigaki, Katsumi ^{[1
,2
]}

机构：

[1] Tohoku Univ, Grad Sch Sci, Dept Phys, Aoba Ku, 6-3 Aramaki, Sendai, Miyagi 9808577, Japan

[2] WPI Adv Inst Mat Res, 2-1-1 Katahira, Sendai, Miyagi 9808578, Japan

来源：

NATURE COMMUNICATIONS | 2016年 / 7卷

关键词：

EXPERIMENTAL REALIZATION; DIRAC CONE; TRANSPORT; BI2SE3; ELECTRON;

D O I：

10.1038/ncomms13763

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi2-xSbxTe3-ySey thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi2-xSbxTe3-ySey on its top half by using tetrafluoro-7,7,8,8- tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

引用

页数：8

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