Surface effects on the mechanical behavior of silicon nanowires: Consequence on the brittle to ductile transition at low scale and low temperature

被引:14
作者
Godet, Julien [1 ]
El Nabi, Firas Abed [1 ]
Brochard, Sandrine [1 ]
Pizzagalli, Laurent [1 ]
机构
[1] Univ Poitiers, UPR CNRS 3346, Pprime Inst, Dept Phys & Mech Mat, F-86962 Futuroscope, France
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 08期
关键词
dislocation; Micropillar; plasticity; simulation; MOLECULAR-DYNAMICS; HIGH-STRESS; PLASTICITY; FRACTURE; COMPRESSION; NUCLEATION; POTENTIALS; COMPUTER; STEP;
D O I
10.1002/pssa.201500001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Understanding the origin of the brittle to ductile transition at low scale in Si requires the characterization of the elementary mechanisms governing crack formation or dislocation nucleation. By molecular dynamics simulations, we have investigated the role of three surface states of silicon nanowires (NWs), fresh cut, reconstructed by annealing at 300K and amorphized, for the activation of plastic mechanisms under tensile and compressive strains. We show that the onset of crack formation identified as wedge-shaped defect on the surface was only observed in fresh-cut NWs in tension. These NWs present high yield strain due to the high symmetry of the surface and the absence of surface defects favoring dislocation nucleation as for the other surface states. This result seems to confirm that the crack formation in nanostructures could be linked to dislocations interactions on intersecting glide planes as experimentally observed rather than direct crack opening.
引用
收藏
页码:1643 / 1648
页数:6
相关论文
共 28 条
[1]   MODIFIED EMBEDDED-ATOM POTENTIALS FOR CUBIC MATERIALS AND IMPURITIES [J].
BASKES, MI .
PHYSICAL REVIEW B, 1992, 46 (05) :2727-2742
[2]   Effects of pre-strain on the compressive stress-strain response of Mo-alloy single-crystal micropillars [J].
Bei, H. ;
Shim, S. ;
Pharr, G. M. ;
George, E. P. .
ACTA MATERIALIA, 2008, 56 (17) :4762-4770
[3]   ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47
[4]  
El Nabi F. Abed, 2015, MODEL SIMUL MATER SC, V23
[5]   Dislocation formation from a surface step in semiconductors:: An ab initio study -: art. no. 092105 [J].
Godet, J ;
Brochard, S ;
Pizzagalli, L ;
Beauchamp, P ;
Soler, JM .
PHYSICAL REVIEW B, 2006, 73 (09)
[6]   Computer study of microtwins forming from surface steps of silicon [J].
Godet, J ;
Pizzagalli, L ;
Brochard, S ;
Beauchamp, P .
COMPUTATIONAL MATERIALS SCIENCE, 2004, 30 (1-2) :16-20
[7]   Comparison between classical potentials and ab initio methods for silicon under large shear [J].
Godet, J ;
Pizzagalli, L ;
Brochard, S ;
Beauchamp, P .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (41) :6943-6953
[8]   Dislocation nucleation from surface step in silicon: The glide set versus the shuffle set [J].
Godet, Julien ;
Hirel, Pierre ;
Brochard, Sandrine ;
Pizzagalli, Laurent .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (08) :1885-1891
[9]   Plasticity in crystalline-amorphous core-shell Si nanowires controlled by native interface defects [J].
Guenole, Julien ;
Godet, Julien ;
Brochard, Sandrine .
PHYSICAL REVIEW B, 2013, 87 (04)
[10]   Deformation of silicon nanowires studied by molecular dynamics simulations [J].
Guenole, Julien ;
Godet, Julien ;
Brochard, Sandrine .
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2011, 19 (07)