Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts

被引：2

作者：

Walsh, Lee A. ^{[1
]}

Weiland, Conan ^{[2
]}

McCoy, Anthony P. ^{[1
]}

Woicik, Joseph C. ^{[2
]}

Lee, Rinus T. P. ^{[3
]}

Lysaght, Pat ^{[3
]}

Hughes, Greg ^{[1
]}

机构：

[1] Dublin City Univ, Dept Phys Sci, Dublin 9, Ireland

[2] NIST, Gaithersburg, MD 20899 USA

[3] SEMATECH, 257 Fuller Rd,Suite 2200, Albany, NY 12203 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 120卷 / 13期

关键词：

MOSFET;

D O I：

10.1063/1.4964251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical and chemical stability of Mo-InGaAs films for source-drain applications in transistor structures has been investigated. It was found that for 5 nm thick Mo films, the sheet resistance remains approximately constant with increasing anneal temperatures up to 500 degrees C. A combined hard x-ray photoelectron spectroscopy and x-ray absorption spectroscopy analysis of the chemical structure of the Mo-InGaAs alloy system as a function of annealing temperature showed that the interface is chemically abrupt with no evidence of inter-diffusion between the Mo and InGaAs layers. These results indicate the suitability of Mo as a thermally stable, low resistance source-drain contact metal for InGaAs-channel devices. Published by AIP Publishing.

引用

页数：5

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