Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface

被引：0
|
作者：
Chinone, Norimichi [1 ]
Kosugi, Ryoji [2 ]
Tanaka, Yasunori [3 ]
Harada, Shinsuke [2 ]
Okumura, Hajime [2 ]
Cho, Yasuo [1 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi, Japan
[2] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[3] Govt Japan, Council Sci Technol & Innovat Policy, Cabinet Off, Tokyo, Japan
来源：
PROCEEDINGS OF THE 2016 IEEE 23RD INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique for microscopically evaluating insulator-semiconductor interface traps is proposed. The proposed technique is applied for SiO2/SiC stack structure and 2-dimensional imaging of interface traps is performed.
引用
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页码：360 / 364
页数：5
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