Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface

被引：0

作者：

Chinone, Norimichi ^{[1
]}

Kosugi, Ryoji ^{[2
]}

Tanaka, Yasunori ^{[3
]}

Harada, Shinsuke ^{[2
]}

Okumura, Hajime ^{[2
]}

Cho, Yasuo ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi, Japan

[2] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[3] Govt Japan, Council Sci Technol & Innovat Policy, Cabinet Off, Tokyo, Japan

来源：

PROCEEDINGS OF THE 2016 IEEE 23RD INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique for microscopically evaluating insulator-semiconductor interface traps is proposed. The proposed technique is applied for SiO2/SiC stack structure and 2-dimensional imaging of interface traps is performed.

引用

页码：360 / 364

页数：5

共 28 条

[1] Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps
Chinone, N.
Cho, Y.
JOURNAL OF APPLIED PHYSICS, 2017, 122 (10)
[2] Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy
Chinone, N.
Kosugi, R.
Tanaka, Y.
Harada, S.
Okumura, H.
Cho, Y.
MICROELECTRONICS RELIABILITY, 2016, 64 : 566 - 569
[3] Two-dimensional local deep level transient spectroscopy imaging using super-higher-order scanning nonlinear dielectric microscopy
Chinone, N.
Cho, Y.
Kosugi, R.
Tanaka, Y.
Harada, S.
Okumura, H.
ISTFA 2016: CONFERENCE PROCEEDINGS FROM THE 42ND INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2016, : 441 - 445
[4] Local Capacitance-Voltage Profiling and Deep Level Transient Spectroscopy of SiO2/SiC Interfaces by Scanning Nonlinear Dielectric Microscopy
Yamasue, Kohei
Cho, Yasuo
2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2021,
[5] Local capacitance-voltage profiling and deep level transient spectroscopy of SiO2/SiC interfaces by scanning nonlinear dielectric microscopy
Yamasue, Kohei
Cho, Yasuo
MICROELECTRONICS RELIABILITY, 2022, 135
[6] Quantitative Imaging of MOS Interface Trap Distribution by Using Local Deep Level Transient Spectroscopy
Chinone, Norimichi
Cho, Yasuo
2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2018,
[7] Carrier redistribution analysis of gate-biased SiC power-MOSFET using super-higher-order scanning nonlinear dielectric microscopy
Chinone, Norimichi
Cho, Yasuo
ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2015, : 329 - 332
[8] Spatially-Resolved Evaluation of Interface Defect Density on Macrostepped SiO2/SiC Using Local Deep Level Transient Spectroscopy
Hosaka, Anna
Yamasue, Kohei
Woerle, Judith
Ferro, Gabriel
Grossner, Ulrike
Camarda, Massimo
Cho, Yasuo
2019 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2019, : 122 - 125
[9] High Resolution Observation of Subsurface Defects at SiO2/4H-SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy
Yamagishi, Yuji
Cho, Yasuo
2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2019,
[10] Local Evaluation of Al2O3 Passivation Layers for Monocrystalline Silicon Solar Cells by Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
Kakikawa, Kento
Yamagishi, Yuji
Tanahashi, Katsuto
Takato, Hidetaka
Cho, Yasuo
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 3118 - 3120

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