Structural and Optoelectronic Properties of β-In2S3 Thin Films to be Applied on Cadmium Reduced Solar Cells

In2S3 thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In2S3 as standard buffer layer in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In2S3 physical properties is analyzed. Stable tetragonal -In2S3 phase was confirmed by X-ray diffraction. Electrical properties were determined by four-point probe technique obtaining a resistivity value of 10(2)cm. CdTe solar cells performance was studied by measuring J-V characteristics and spectral quantum efficiencies. These results reveal In2S3 thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300-500nm).