Gradual reset and set characteristics in yttrium oxide based resistive random access memory

被引：27

作者：

Petzold, Stefan ^{[1
]}

Piros, Eszter ^{[1
]}

Sharath, S. U. ^{[1
]}

Zintler, Alexander ^{[2
]}

Hildebrandt, Erwin ^{[1
]}

Molina-Luna, Leopoldo ^{[2
]}

Wenger, Christian ^{[3
,4
]}

Alff, Lambert ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Sci, Adv Thin Film Technol Div, D-64287 Darmstadt, Germany

[2] Tech Univ Darmstadt, Inst Mat Sci, Adv Electron Microscopy Div, D-64287 Darmstadt, Germany

[3] IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, Germany

[4] Brandenburg Med Sch Theodor Fontane, D-16816 Neuruppin, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 07期

基金：

欧洲研究理事会;

关键词：

gradual; neuromorphic; resistive random access memory; resistive switching; retention; yttria; yttrium oxide; ATOMIC LAYER DEPOSITION; Y2O3; THIN-FILMS; GATE DIELECTRICS; METAL; DEVICES; SYNAPSES;

D O I：

10.1088/1361-6641/ab220f

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack. For bipolar DC operation, the devices show gradual set and reset behavior with resistance ratio up to two orders of magnitude. By using nanosecond regime pulses (20 to 100 ns pulse width) of constant voltage amplitude, this gradual switching behavior could be utilized in tuning the resistance during set and reset spanning up to two orders of magnitude. This demonstrates that yttrium oxide based RRAM devices are alternative candidates for multibit operations and neuromorphic applications.

引用

页数：6

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