Electrodeposition of CuInSe2 thin films onto Mo-glass substrates

被引：44

作者：

Kois, J. ^{[1
]}

Bereznev, S. ^{[1
]}

Mellikov, E. ^{[1
]}

Opik, A. ^{[1
]}

机构：

[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia

来源：

THIN SOLID FILMS | 2006年 / 511卷

关键词：

electrodeposition; CuInSe2; thin films;

D O I：

10.1016/j.tsf.2005.11.075

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The mechanism of the underpotential electrodeposition of copper indium diselenide (CIS) in the presence of an excess of In3+ was studied. It was found that the value of indium and copper ratio (In/Cu) in the films electrodeposited in the potentials area from -0.2 to -0.6 V (vs. SCE) is independent of the concentration ratio of Cu2+/In3+. At the same time, the concentration of indium in the films obtained is determined both by the deposition potential and the ratio of Se(IV)/Cu2+ in the solution. The proposed model provides the list of the formed compounds as a function of the solution concentration and the applied potential. (c) 2005 Elsevier B.V All rights reserved.

引用

页码：420 / 424

页数：5

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