X-ray excited spectroscopy of defects and impurities in compound semiconductors

Analysis of local structures around impurities and defects in compound semiconductors and insulator by X-ray excited spectroscopy, namely, XAFS with fluorescence X-ray detection technique (fluorescence-XAFS) and with photoluminescence detection technique (PL-XAFS), is presented. Those two techniques that use the surface incidence and surface detection are essentially important for samples with a thin epitaxial layer, where the impurities and defects exist, grown on a thick substrate. Er in InP, Er and O in GaAs, Tb in SiO2 and DX-center in GaAs are taken as examples and local structures around these impurities are elucidated. (C) 2003 Elsevier Ltd. All rights reserved.