Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C

被引：16

作者：

Liu, J-W ^{[1
]}

Oosato, H. ^{[2
]}

Da, B. ^{[3
]}

Teraji, T. ^{[1
]}

Kobayashi, A. ^{[4
]}

Fujioka, H. ^{[4
]}

Koide, Y. ^{[5
]}

机构：

[1] Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, Nanofabricat Platform, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[3] NIMS, Res & Serv Div Mat Data & Integrated Syst, Tsukuba, Ibaraki 3050047, Japan

[4] Univ Tokyo, Inst Ind Sci, Tokyo 1538508, Japan

[5] NIMS, Res Network & Facil Serv Div, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2019年 / 52卷 / 31期

关键词：

diamond; MOSFET; high-temperature; POWER; FREQUENCY;

D O I：

10.1088/1361-6463/ab1e31

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Operations for hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) after annealing at 500 degrees C are investigated. SiOx films are employed as oxide insulators for the II-diamond MOSFETs. Before annealing, the current output maximum, on/off ratio, and subthreshold swing for the SiOx/H-diamond MOSFET are -53.3 mA mm(-1), 1.4 x 10(9), and 88 mV dec(-1), respectively. After annealing at 500 degrees C for as long as 60min, although leakage current density of the SiOx/H-diamond MOS capacitor increases, good operations and distinct pinch-off characteristics are observed for the SiOx/H-diamond MOSFET with the above electrical properties of -2.6 mA mm(-1), 1.4 x 10(4), and 530 mV dec(-1), respectively. Stable electrical characteristics are confirmed for the annealed SiOx/H-diamond MOSFET after 35 cycles repeat measurements. This study is meaningful to the development of H-diamond MOSFETs for high-temperature applications.

引用

页数：7

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