FPGA Memory Testing Technique using BIST

被引:0
作者
Gadde, Priyanka [1 ]
Niamat, Mohammed [1 ]
机构
[1] Univ Toledo, Dept Elect Engn & Comp Sci, Toledo, OH 43606 USA
来源
2013 IEEE 56TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2013年
关键词
SRAM;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The wide use of Field Programmable Gate Arrays (FPGAs) in critical applications including, military and airborne applications require fault free operation of the FPGA. In FPGAs, faults can occur in the memory resources, logic blocks, or the interconnects. In this paper, memory faults including Stuck-at, Transition, Address Decoder, Incorrect Read, Deceptive Read Destructive, and Data Retention Faults are analyzed using an optimized March C-algorithm. In order to evaluate the effectiveness of this algorithm, a novel Built-in Self Test (BIST) technique to test the embedded SRAM memory of the FPGA is proposed. The proposed technique reduces the test time by approximately half as compared to previously published schemes. The FPGA is modeled in VHDL at the equivalent gate level and the simulations results are generated using ModelSim.
引用
收藏
页码:473 / 476
页数:4
相关论文
共 50 条
[41]   Efficient testing of SRAM with optimized march sequences and a novel DFT technique for emerging failures due to process variations [J].
Chen, QK ;
Mahmoodi, H ;
Bhunia, S ;
Roy, K .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2005, 13 (11) :1286-1295
[42]   On Using Cell-Aware Methodology for SRAM Bit Cell Testing [J].
Xhafa, X. ;
Ladhar, A. ;
Faehn, E. ;
Anghel, L. ;
Di Pendina, G. ;
Girard, P. ;
Virazel, A. .
2023 IEEE EUROPEAN TEST SYMPOSIUM, ETS, 2023,
[43]   Neutron Induced Single Event Upset (SEU) Testing of Commercial Memory Devices with Embedded Error Correction Codes (ECC) [J].
Bird, John M. ;
Peters, Michael K. ;
Fullem, Travis Z. ;
Tostanoski, Michael J. ;
Deaton, Terrence F. ;
Hartojo, Kristianto ;
Strayer, Roy E., Jr. .
2017 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2017, :119-126
[44]   Variation Mitigation Technique in SRAM Cell using Adaptive Body Bias [J].
Kushwaha, S. ;
Prasad, S. ;
Islam, A. .
PROCEEDINGS OF THE 2012 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, DEVICES AND INTELLIGENT SYSTEMS (CODLS), 2012, :117-120
[45]   A novel technique for minimisation of March test using read equivalent stress [J].
Prince P. ;
Sivamangai N.M. .
International Journal of Nanomanufacturing, 2020, 16 (02) :184-201
[46]   In -Memory Encryption using XOR-based Feistel Cipher in SRAM Array [J].
Kavitha, S. ;
Reniwal, B. S. .
2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024, 2024,
[47]   Estimating the Single-Event Upset sensitivity of a memory array using simulation [J].
Raine, Melanie ;
Gaillardin, Marc ;
Lagutere, Thierry ;
Duhamel, Olivier ;
Paillet, Philippe .
MICROELECTRONICS RELIABILITY, 2017, 78 :349-354
[48]   Novel In-memory Computing Circuit using Muller C-element [J].
Song, Soonbum ;
Kim, Youngmin .
18TH INTERNATIONAL SOC DESIGN CONFERENCE 2021 (ISOCC 2021), 2021, :81-82
[49]   Novel In-Memory Computing Adder Using 8+T SRAM [J].
Song, Soonbum ;
Kim, Youngmin .
ELECTRONICS, 2022, 11 (06)
[50]   Design and Implementation of CNFET SRAM Cells by Using Multi-Threshold Technique [J].
Kavitha, Shanmugam ;
Kumar, Chandrasekaran ;
Fayek, Hady H. ;
Rusu, Eugen .
ELECTRONICS, 2023, 12 (07)