InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer

被引：4

作者：

Kim, M ^{[1
]}

Kim, CY ^{[1
]}

Kwon, YS ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期

关键词：

D O I：

10.1063/1.1713053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP/InGaAs heterojunction bipolar transistors (HBTs) with low-resistance Ti/Pt/Au contact directly on heavily doped InP emitter layer have been demonstrated. A specific contact resistance of Ti/Pt/Au to n-type InP with doping concentration of 2x10(19) cm(-3) was investigated with the tunneling model theoretically and transmission line model (TLM) experimentally, revealing that it depends greatly on the doping level. TLM measurements exhibited a low specific contact resistance of 3.5x10(-7) Omega cm(2), which can be applicable to the fabrication of HBTs. InP/InGaAs HBTs with n(+)-InP emitter layer have been demonstrated with excellent dc characteristics, including a low offset voltage of 0.12 V, a knee voltage of 0.5 V, and a current gain of 28. These results verify that the heavily doped InP emitter layer allows a low-resistance contact. (C) 2004 American Institute of Physics.

引用

页码：2934 / 2936

页数：3

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