InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer

被引：4
|
作者：
Kim, M [1 ]
Kim, CY [1 ]
Kwon, YS [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期
关键词：
D O I：
10.1063/1.1713053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InP/InGaAs heterojunction bipolar transistors (HBTs) with low-resistance Ti/Pt/Au contact directly on heavily doped InP emitter layer have been demonstrated. A specific contact resistance of Ti/Pt/Au to n-type InP with doping concentration of 2x10(19) cm(-3) was investigated with the tunneling model theoretically and transmission line model (TLM) experimentally, revealing that it depends greatly on the doping level. TLM measurements exhibited a low specific contact resistance of 3.5x10(-7) Omega cm(2), which can be applicable to the fabrication of HBTs. InP/InGaAs HBTs with n(+)-InP emitter layer have been demonstrated with excellent dc characteristics, including a low offset voltage of 0.12 V, a knee voltage of 0.5 V, and a current gain of 28. These results verify that the heavily doped InP emitter layer allows a low-resistance contact. (C) 2004 American Institute of Physics.
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收藏
页码：2934 / 2936
页数：3
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