Homoepitaxial growth of CVD diamond: Effect of nitrogen contaminations on growth rates

被引：0
|
作者：
Wild, C [1 ]
Locher, R [1 ]
Koidl, P [1 ]
机构：
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY
来源：
DIAMOND FOR ELECTRONIC APPLICATIONS | 1996年 / 416卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：75 / 80
页数：6
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